Cl2-Based Dry Etching of the AlGalnN System in Inductively-Coupled Plasmas

Cl2-Based Dry Etching of the AlGalnN System in Inductively-Coupled Plasmas

著者名:

Cho, Hyun

掲載資料名:

Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

483

発行年:

1998

開始ページ:

327

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993884 [1558993886]

言語:

英語

請求記号:

M23500/483

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018454
シリーズID:	PA00000011
会議名:	Symposium on power semiconductor materials and devices
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.04

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4 国際会議録 High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas Vartuli, C. B., Pearton, S. J., Abernathy, C. R., Shul, R. J., Kilcoyne, S. P., Crawford, M. Hagerott, Howard, A. J., … MRS - Materials Research Society	10 国際会議録 Dry Etch Damage in InN, InGaN and InAlN Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., … MRS - Materials Research Society
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