Metallization of Thin Graphite Layers After Cs Deposition on 4H-SiC(0001) Surfaces

Metallization of Thin Graphite Layers After Cs Deposition on 4H-SiC(0001) Surfaces

著者名:

掲載資料名:

Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

483

発行年:

1998

開始ページ:

229

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993884 [1558993886]

言語:

英語

請求記号:

M23500/483

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018454
シリーズID:	PA00000011
会議名:	Symposium on power semiconductor materials and devices
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.04

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2 国際会議録 Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H. Trans Tech Publications	8 国際会議録 Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers J. Woerle, M. Camarda, C.W. Schneider, H. Sigg, U. Grossner, J. Gobrecht Trans Tech Publications
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6 国際会議録 Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition Jeong, J.K., Song, H.K., Um, M.Y., Kim, H.J., Seo, H.C., Yoon, E., Hwang, C.S. Trans Tech Publications	12 国際会議録 Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface J.P. Goss, P.R. Briddon, N.G. Wright, A.B. Horsfall Trans Tech Publications

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