4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures | 東京工業大学附属図書館文献データベース

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4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

著者名:

Siergiej, R. R.

Sheridan, D. C.

さらに 4 件

掲載資料名:

Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

483

発行年:

1998

開始ページ:

27

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993884 [1558993886]

言語:

英語

請求記号:

M23500/483

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018454
シリーズID:	PA00000011
会議名:	Symposium on power semiconductor materials and devices
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.04

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1 国際会議録 4H-SiC Gate Turn-Off(GTO)Thyristor Development Casady,J.B., Agarwal,A.K., Rowland,L.B., Siergiej,R.R., Seshadri,S., Mani,S., Barrows,J., Piceone,D., Sanger,P.A., … Trans Tech Publications	7 テクニカルペーパー SiC high temperature electronics for next generation aircraft controls systems Perkins, John F., Hopkins, Richard H., Brandt, Charles D., Agarwal, Anant K., Seshadri, Suresh, Siergiej, Richard R. The American Society of Mechanical Engineers
2 国際会議録 Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power UMOSFET Structures Agarwal, A. K., Siergiej, R. R., Seshadri, S., White, M. H., McMullin, P. G., Burk, A. A., Rowland, L. B., Brandt, C. … MRS - Materials Research Society	8 国際会議録 A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices J.B. Casady, D.C. Sheridan, R.L. Kelley, V. Bondarenko, A. Ritenour Trans Tech Publications
3 テクニカルペーパー Silicon Carbide Power Devices for Use in Hybrid-EV Casady,Jeffrey B., Agarwal,Anant K., Seshadri,Suresh, Siergiej,Richard R., MacMillan,Michael F., Dunne,Greg T., … Society of Automotive Engineers	9 国際会議録 900V, 1.46mOhm-cm² 4H-SiC Depletion Mode Vertical JFET K. Chatty, D.C. Sheridan, V. Bondarenko, R. Schrader, J.B. Casady Trans Tech Publications
4 国際会議録 *Current status of SiC power switching devices: Diodes and GTOs Seshadri, S., Agarwal, A. K., Hall, W. B., Mani, S. S., MacMillan, M. F., Rodrigues, R., Hanson, T., Khatri, S., Sanger, … MRS-Materials Research Society	10 国際会議録 Demonstration of Deep (80 μm) RIE Etching of SiC for MEMS and MMIC Applications Sheridan, D. C., Casady, J. B., Ellis, E. C., Siergiej, R. R., Cressler, J. D., Strong, R. M., Urban, W. M., Valek, W. … Trans Tech Publications
5 国際会議録 1400 V 4H-SiC Power MOSFETs Agarwal,A.K., Casady,J.B., Rowland,L.B., Valek,W.F., Brandt,C.D. Trans Tech Publications	11 国際会議録 Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules D.C. Sheridan, A. Ritenour, V. Bondarenko, J.B. Casady, R.L. Kelley Trans Tech Publications
6 テクニカルペーパー "Silicon Carbide Temperature-Tolerant Electronics for Electric, Hybrid-EV" Casady,Jeffrey, Perkins,John, Winter,T., Brandt,C., Agarwal,A., Siergiej,R., Seshadri,S., Hopkins,Richard "Society of Automotive Engineering, Inc."	12 国際会議録 SiC JFET Power Modules for Reliable 250°C Operation D.C. Sheridan, J.B. Casady, T. Autry, R. Aguirre, V. Lee Trans Tech Publications

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