Observation of Configurational Switching of Deep Defects in a-Si:H Using Thermal Step Insertion During Capacitance Transient Measurements

Observation of Configurational Switching of Deep Defects in a-Si:H Using Thermal Step Insertion During Capacitance Transient Measurements

著者名:

掲載資料名:

Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

420

発行年:

1996

開始ページ:

709

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993235 [1558993231]

言語:

英語

請求記号:

M23500/420

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018448
シリーズID:	PA00000011
会議名:	Symposium on amorphous silicon technology
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

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