Characterization of intrinsic thin silicon dioxide breakdown under static and dynamic stress

Characterization of intrinsic thin silicon dioxide breakdown under static and dynamic stress

著者名:

Chaparala,P. ( National Semiconductor Corp. )
Suehle,J.S.

掲載資料名:

Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2874

発行年:

1996

開始ページ:

114

終了ページ:

124

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819422729 [081942272X]

言語:

英語

請求記号:

P63600/2874

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018422
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
回次:	1996 : 2nd
会議開催地:	Austin, TX, USA
会議開催年:	1996.10.16-1996.10.17

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