RADCAP:A MOS Capacitor Simulator for Radiation Effects

RADCAP:A MOS Capacitor Simulator for Radiation Effects

著者名:

Zaman,P.

掲載資料名:

Semiconductor Devices

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2733

発行年:

1996

開始ページ:

533

終了ページ:

537

出版情報:

Bellingham, WA — New Delhi: SPIE-The International Society for Optical Engineering — Narosa

ISSN:

0277786X

ISBN:

9780819421142 [0819421146]

言語:

英語

請求記号:

P63600/2733

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018408
シリーズID:	PA00000029

類似資料:

1 国際会議録 Device Simulation for Radiation and Hot Carrier Effects Sharma,D.K., Ekbote,S., Zaman,P, Shaila Subbaraman, Das,A., Vasi,J. Narosa Publishing House	7 国際会議録 Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation Y.K. Sharma, F. Li, C.A. Fisher, M.R. Jennings, D. Hamilton Trans Tech Publications
2 国際会議録 Simulation of Radiation Effects in MOSFETs Ekbote,S., Tambe,D., Zaman,P., Dangat,H.K., Khare,M., Sinha,P., Rodd,S., Bukhanwala,N., Vasi,J., Sharma,D.K., Das,A. SPIE-The International Society for Optical Engineering, Narosa	8 国際会議録 High Field Stressing Effects in JVD Nitride Capacitors ManjulaRani, K.N., Ramgopal Rao, V., Vasi, J. SPIE-The International Society for Optical Engineering
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4 国際会議録 Neutron Induced Ionization Damage in MOS Capacitor and MOSFET Structures Vaidya, S.J., Sharma, D.K., Chandorkar, A.N. SPIE-The International Society for Optical Engineering	10 国際会議録 Realization of Diffusion to Poly Capacitor in SALICIDE Based CMOS Process Pandey,S.M., Jain,H., Pal,D.K., Roy,J.N. SPIE - The International Society for Optical Engineering
5 国際会議録 The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors S.M. Thomas, M.R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby Trans Tech Publications	11 国際会議録 Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes Allums, K., Luo, B., Mehandru, R., Gila, B.P., Dwivedi, R., Fogarty, T.N., Wilkins, R., Abernathy, C.R., Ren, F., … Materials Research Society
6 国際会議録 Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors S.M. Thomas, M.R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby Trans Tech Publications	12 国際会議録 RADSPICE:A Circuit Simulator to Predict the Effects of Radiation Chumber,H.K., Kalavade,P.P., Parikh,C.D., Das,A. SPIE-The International Society for Optical Engineering, Narosa

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