Vacancy-Type Defects in Si+-and B+-Implanted Si Probed by a Monoenergetic Positron Beam
- 著者名:
Uedono,A. Wei,L. Tabuki,Y. Kondo,H. Tanigawa,S. Sugiura,J. Ogasawara,M. - 掲載資料名:
- Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 105-110
- 発行年:
- 1992
- 巻:
- Pt.3
- 開始ページ:
- 1479
- 終了ページ:
- 1482
- 出版情報:
- Aederlmannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496365 [087849636x]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Materials Research Society |
2
国際会議録
Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
12
国際会議録
Vacancy-Type Defects in MOSFETs with High-κ Gate Dielectrics Probed by Monoenergetic Positron Beams
Electrochemical Society |