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Vacancy Type Defects After Post Growth Quenching and Re-Anneajing of Si GaAs

著者名:
掲載資料名:
Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary
シリーズ名:
Materials science forum
シリーズ巻号:
105-110
発行年:
1992
巻:
Pt.2
開始ページ:
929
終了ページ:
932
出版情報:
Aederlmannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496365 [087849636x]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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