High-density plasma-induced etch damage of GaN

High-density plasma-induced etch damage of GaN

著者名:

Shul, R.J. ( Sandia National Laboratories )

掲載資料名:

Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

573

発行年:

1999

開始ページ:

271

終了ページ:

280

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558994805 [1558994807]

言語:

英語

請求記号:

M23500/573

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018349
シリーズID:	PA00000011
会議名:	Symposium on compound semiconductor surface passivation and novel device processing
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.07

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