Wet and dry etching characteristics of electron beam deposited SiO and SiO2

Wet and dry etching characteristics of electron beam deposited SiO and SiO2

著者名:

LaRoche, J.R. ( University of Florida )

掲載資料名:

Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

573

発行年:

1999

開始ページ:

259

終了ページ:

264

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558994805 [1558994807]

言語:

英語

請求記号:

M23500/573

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018349
シリーズID:	PA00000011
会議名:	Symposium on compound semiconductor surface passivation and novel device processing
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.07

類似資料:

1 国際会議録 The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs LaRoche, J.R., Ren, F., Lothian, J.R., Hong, J., Lambers, E., Pearton, S.J. Electrochemical Society	7 国際会議録 Effect of Dry Etching in III-Nitride Surface Properties Ren, F., Lothian, J.R., Pearton, S.J., Abernathy, C.R., Vartuli, C.B., Karlicek, B., Karlicek, R.F., Jr., MacKenzie, … Electrochemical Society
2 国際会議録 REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2 Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S. Materials Research Society	8 国際会議録 Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma Ren, F., Pearton, S.J., Hobson, W.S., Lothian, J.R., Lopata, J., Cole, M.W., Caballero, J.A. Electrochemical Society
3 国際会議録 WET AND DRY ETCHING OF InGaP Lothian, J. R., Kuo, J. M., Pearton, S. J., Ren, F. Materials Research Society	9 国際会議録 Patterning of LiGaO2 and LiAlO2 by Wet and Dry Etching Lee, J. W., Pearton, S. J., Abernathy, C. R., Wilson, R. G., Chai, B. L., Ren, F., Zavada, J. M. MRS - Materials Research Society
4 国際会議録 Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation Ren, F., LaRoche, J., Anderson, T., Pearton, S.J., Lee, J.W., Johnson, D., Lothian, J.R., Lin, J., Weiner, J.S., Shul, … Electrochemical Society	10 国際会議録 Dry Etching of InGaP and AlInP in CH4/H2/Ar Lee, J. W., Pearton, S. J., Santana, C. J., Lambers, E. S., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society
5 国際会議録 Novel in-situ ion bombardment process for a thermally stable (>800 C) plasma deposited dielectric Ren, F., Lothian, J.R., Pearton, S.J., Wilson, R.G., LaRoche, J.R., Lee, J.W., Johnson, D., Zavada, J.M. Materials Research Society	11 国際会議録 GROWTH OF GaN, AIN AND InN BY ELECTRON CYCLOTRON RESONANCE-METAL ORGANIC MOLECULAR BEAM EPITAXY Wisk, P.W., Abernathy, C.R., Pearton, S.J., Ren, F., Lothian, J.R., Katz, A., Jones, K. Materials Research Society
6 国際会議録 Investigation of Wet Chemical Etching of InGaAlP Alloys Lee, J.W., Santana, C.J., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S., Lothian, J.R., Wu, C.S. Electrochemical Society	12 国際会議録 Development of GaN and InGaN Gratings by Dry Etching Lee, J. W., Hong, J., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Ren, F., Sciortino, P. F., Jr. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12