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Advances in GaAs MOSFET's using Ga2O3(Gd2O3) as gate oxide

著者名:
Wang, Y.C. ( Bell Laboratories )
Hong, M.
Kuo, J.M.
Mannaerts, J.P.
Kwo, J.
Tsai, H.S.
Krajewski, J.J.
Weiner, J.S.
Chen, Y.K.
Cho, A.Y.
さらに 5 件
掲載資料名:
Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
573
発行年:
1999
開始ページ:
219
終了ページ:
225
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558994805 [1558994807]
言語:
英語
請求記号:
M23500/573
資料種別:
国際会議録

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