One-step silicon nitride passivation by ECR-CVD for heterostructure transistors and MIS devices

One-step silicon nitride passivation by ECR-CVD for heterostructure transistors and MIS devices

著者名:

Diniz, J.A. ( State University of Campinas (UNICAMP), Brazil )

de Barros, L.E.M., Jr.

掲載資料名:

Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

573

発行年:

1999

開始ページ:

137

終了ページ:

142

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558994805 [1558994807]

言語:

英語

請求記号:

M23500/573

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018349
シリーズID:	PA00000011
会議名:	Symposium on compound semiconductor surface passivation and novel device processing
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.07

類似資料:

1 国際会議録 ECR-CVD SiNX Passivation in GaAs-based MISFET Devices L. B. Zoccal, J. A. Diniz, J. G. Fo, A. Daltrini, J. W. Swart Electrochemical Society	7 国際会議録 A Comparative Study of Aluminum and Tungsten Silicon Schottky Diodes de Souza, P.R., Swart, J.W., Diniz, J.A. Electrochemical Society
2 国際会議録 Suspended Membranes Made by Silicon Nitride Deposited by ECR-CVD Biasotto, C., Monte, B., Neli, R. R., Ramos, A. C. S., Diniz, J. A., Moshkalyov, S.A., Doi, I., Swart, J. W. Electrochemical Society	8 国際会議録 Selective Silicon Nitride Etching by ECR Plasmas Using SF6 and NF3 Based Gas Mixtures Reyes-Betanzo, C., Moshkalyov, S.A., Swart, J.W., Ramos, A.C.S. Electrochemical Society
3 国際会議録 Silicon Oxynitride Gate-Dielectric Made by ECR Plasma Oxynitridation Manera, G. A., Diniz, J. A., Moshkalyov, S. A., Lujan, G. S., Doi, I., Swart, J. W. Electrochemical Society	9 国際会議録 Characteristics of Silicon Oxynitrides Made By ECR Plasmas Diniz, J.A., Tatsch, P.J., Swart, J. Electrochemical Society
4 国際会議録 Ultra-Thin Silicon Oxynitride Gate-Dielectric Made by ECR Plasmas Manera, G.A., Diniz, J.A., Doi, I., Swart, J.W. Electrochemical Society	10 国際会議録 Silicon Carbon Nitride Films Deposited by ECR CVD Chen, K-H., Wu, J.-J., Wen, C.-Y., Chen, L-C., Fan, C.-W, Kuo, P.-F., Chen, Y.-F., Huang, Y.-S. Electrochemical Society
5 国際会議録 Locos Isolation Made by Silicon Nitride ECR Plasma Deposition at Room Temperature Pereira, M.A., Diniz, J.A., Doi, I., Swan, J.W. Electrochemical Society	11 国際会議録 ECR-CCD SiNx Passivation in GaAs-Based Devices Zoccal, L. B., Diniz, J. A., Ramos, A. C. S. Electrochemical Society
6 国際会議録 Silicon nitride deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposititon for micromachining applications Panepucci,R.R., Diniz,J.A., Carli,E., Tatschi,P.J., Swart,J.W. SPIE-The International Society for Optical Engineering	12 国際会議録 Orientation-Dependent Anisotropic Etching Simulation in Silicon Wafer Neli, R.R., Doi, I., Ribas, R.P., Diniz, J.A., Swart, J.W. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12