A novel surface passivation structure for III-V compound semiconductors utilizing a silicon interface control layer and its applications
- 著者名:
- Hashizume, Tamotsu ( Hokkaido University, Japan )
- Hasegawa, Hideki
- 掲載資料名:
- Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 573
- 発行年:
- 1999
- 開始ページ:
- 45
- 終了ページ:
- 56
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994805 [1558994807]
- 言語:
- 英語
- 請求記号:
- M23500/573
- 資料種別:
- 国際会議録
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