Si1-x-yGexCy channel heterojunction PMOSFETs

Si1-x-yGexCy channel heterojunction PMOSFETs

著者名:

John,S. ( Univ.of Texas at Austin )
Ray,S.K. ( Indian Institute of Technology )
Oswal,S.K. ( Univ.of Texas at Austin )
Banerjee,S.K. ( Univ.of Texas at Austin )

掲載資料名:

Microelectronic Device Technology : 1-2 October 1997, Austin, Texas

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3212

発行年:

1997

開始ページ:

354

終了ページ:

359

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426444 [081942644X]

言語:

英語

請求記号:

P63600/3212

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018328
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Device Technology
回次:	1997
会議開催地:	Austin, TX, USA
会議開催年:	1997.10.01-1997.10.02

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1 国際会議録 High-Mobility Heterostructure PMOSFET Using Strain-Compensated SiGeC Channel Ray,S.K., John,S., Oswal,S., Banerjee,S.K. Narosa Publishing House	7 国際会議録 Novel Strained-Si Heterostructure NMOSFETs on Solid Phase Epitaxially Grown Relaxed Si1-xGex Ray,S.K., John,S., Banerjee,S.K. SPIE - The International Society for Optical Engineering
2 国際会議録 SiGe/Si vertical PMOSFET device design and fabrication Liu,K.C., Oswal,S.K., Ray,S.K., Banerjee,S.K. SPIE-The International Society for Optical Engineering	8 国際会議録 Temperature Dependence of Hall Mobility in Strained Si1-xGex/Si1-x-yGexCy Kar,G.S., Dhar,A., Ray,S.K. SPIE - The International Society for Optical Engineering
3 国際会議録 Strained Si NMOSFET on relaxed Si1-XGeX formed by ion implantation of Ge John,S., Ray,S.K., Oswal,S.K., Banerjee,S.K. SPIE-The International Society for Optical Engineering	9 国際会議録 Role of Boron TED and Series Resistance in SiGe/Si Heterojunction pMOSFETs Yonghyun Kim, Chang Yong Kang, Se-Hoon Lee, Prashant Majhi, Byoung-Gi Min, Ki-Seung Lee, Donghwan Ahn, Sanjay K. … Materials Research Society
4 国際会議録 Microwave Plasma Oxidation of Strain-Compensated Si1-x-yGexCy Films Ray,S.K., Bera,L.K., John,S., Banerjee,S.K., Maiti,C.K. Narosa Publishing House	10 国際会議録 Schottky diode on Si/Si1-x-yGexCy/Si quantum well heterostructures for long wavelength IR detector Kar,G.S., Maikap,S., Dhar,A., Ray,S.K. SPIE-The International Society for Optical Engineering
5 国際会議録 Electrical Characteristics of Deep-Submicron Vertical SiGe n-MOSFETs Liu, K.-C., Quinones, E.J., Chen, X., Anantharam, B., Chen, X.D., Ray, S.K., Oswal, S.K., Banerjee, S.K. Electrochemical Society	11 国際会議録 Applications of silicon-germanium-carbon in MOS and bipolar transistors (Invited Paper) Banerjee,S.K. SPIE-The International Society for Optical Engineering
6 国際会議録 Surface Morphology of Si1-x-yGexCy Epitaxial Films Deposited by Low-Temperature UHV-CVD John, S., Quinones, E. J., Ferguson, B., Ray, S. K., Mullins, C. B., Banerjee, S. K. MRS - Materials Research Society	12 国際会議録 "Si1-x-yGexCy Growth and Properties of the Ternary System" Powell R. A., Eberl K., Ek A. B., Iyer S. S. Kluwer Academic Publishers

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