Computationally efficient ion implantation damage model: modified Kinchin-Pease model

Computationally efficient ion implantation damage model: modified Kinchin-Pease model

著者名:

Wang,G. ( Univ.of Texas at Austin )

Tian,S. ( Univ.of Texas at Austin )

Morris,M.F. ( Univ.of Texas at Austin )

Morris,S.J. ( Univ.of Texas at Austin )

Obradovic,B.J. ( Univ.of Texas at Austin )

Balamurugan,G. ( Univ.of Texas at Austin )

Tasch,A.F. ( Univ.of Texas at Austin )

さらに 2 件

掲載資料名:

Microelectronic Device Technology : 1-2 October 1997, Austin, Texas

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3212

発行年:

1997

開始ページ:

324

終了ページ:

333

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426444 [081942644X]

言語:

英語

請求記号:

P63600/3212

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018328
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Device Technology
回次:	1997
会議開催地:	Austin, TX, USA
会議開催年:	1997.10.01-1997.10.02

類似資料:

1 国際会議録 Improved analytic models and efficient parameter extraction for computationally efficient 1D and 2D ion implantation modeling Balamurugan,G., Obradovic,B.J., Wang,G., Chen,Y., Tasch,A.F. SPIE-The International Society for Optical Engineering	7 国際会議録 Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, BF2, and As Ion Implantation Parab, K. B., Yang, S. -H., Morris, S. J., Tian, S., Morris, M., Obradovich, B., Tasch, A. F., Kamenitsa, D., Simonton, … MRS - Materials Research Society
2 国際会議録 Experimental verification of a new physically based low-energy (<5 keV) ion implant model Obradovic,B.J., Morris,S.J., Morris,M.F., Tian,S., Wang,G., Beardmore,K., Snell,C.M., Jackson,J., Baumann,S., Tasch,A.F. SPIE-The International Society for Optical Engineering	8 国際会議録 A Two-Dimensional, Accurate and Computationally Efficient Model for Boron Implantation through Oxide Layers into Silicon Morris, S., Lim, D., Yang, S.-H., Tian, S., Parab, K., Tasch, A.F. Electrochemical Society
3 国際会議録 Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon Obradovic,B.J., Morris,S.J., Morris,M.F., Tian,S., Wang,G., Beardmore,K., Snell,C., Jackson,J., Baummann,S., Tasch,A.F. SPIE-The International Society for Optical Engineering	9 国際会議録 Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through … Morris, S., Lim, D., Yang, S. -H., Tian, S., Parab, K., Tasch, A. F. MRS - Materials Research Society
4 国際会議録 Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach Tian, S., Morris, M., Morris, S. J., Obradovic, B., Tasch, A. F. MRS - Materials Research Society	10 国際会議録 A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon Yang, S.-H., Morris, S., Tian, S., Parab, K., Tasch, A. F., Echenique, P. M., Capaz, R., Joannopoulos, J. MRS - Materials Research Society
5 国際会議録 Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach Tian, S., Morris, M., Morris, S. J., Obradovic, B., Tasch, A. F. MRS - Materials Research Society	11 国際会議録 A NEW COMPUTATIONALLY-EFFICIENT TWO-DIMENSIONAL MODEL FOR BORON IMPLANTATION INTO SINGLE-CRYSTAL SILICON Klein, K. M., Park, C., Yang, S., Morris, S., Do, V., Tasch, A. F. Materials Research Society
6 国際会議録 COMPUTATIONAI EFFICIENT ANALYTICAL MODEL FOR 2-D ION IMPLANTATION Li, D., lialarnurugan, G., Obradovic, B.J., Wang, G., Chen, Y., Tasch, A.F. Electrochemical Society	12 国際会議録 An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV Morris, S. J., Obradovic, B., Yang, S-H., Tasch, A. F., Rubin, L. MRS - Materials Research Society

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