Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

著者名:

Steinhausler,T. ( Olin Microelectronic Materials,Inc. )

Gabor,A.H. ( Olin Microelectronic Materials,Inc. )

White,D. ( Olin Microelectronic Materials,Inc. )

Blakeney,A.J. ( Olin Microelectronic Materials,Inc. )

Stark,D.R. ( SEMATECH )

Miller,D.A. ( SEMATECH )

Rich,G.K. ( SEMATECH )

Graffenberg,V.L. ( SEMATECH )

Dean,K.R. ( SEMATECH )

さらに 4 件

掲載資料名:

Advances in resist technology and processing XV : 23-25 February 1998, Santa Clara, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3333

発行年:

1998

巻:

Part 1

開始ページ:

122

終了ページ:

131

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427786 [0819427780]

言語:

英語

請求記号:

P63600/3333

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018317
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in resist technology and processing
回次:	1998 : 15th
会議開催地:	Santa Clara, CA, USA
会議開催年:	1998.02.23-1998.02.25

類似資料:

1 国際会議録 Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography White,D., Beauchemin,B.T.,Jr., Blakeney,A.J., Steinhausler,T. SPIE-The International Society for Optical Engineering	7 国際会議録 Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development Gabor,A.H., Allen,R.D., Gallagher-Wetmore,P.M., Ober,C.K. SPIE-The International Society for Optical Engineering
2 国際会議録 Bilayer resist approach for 193-nm lithography Schaedeli,U.P., Tinguely,E., Blakeney,A.J., Falcigno,P.A., Kunz,R.R. SPIE-The International Society for Optical Engineering	8 国際会議録 Positive bilayer resists for 248-and 193-nm lithography Sooriyakumaran,R., Wallraff,G.M., Larson,C.E., Fenzel-Alexander,D., DiPietro,R.A., Opitz,J., Hofer,D.C., … SPIE-The International Society for Optical Engineering
3 国際会議録 193-nm thin-layer imaging performance of 140-nm contact hole patterning and DOE dry development process optimization of multilayer resist process Kim,W.D., Hwang,S.B., Rich,G.K., Graffenberg,V.L. SPIE - The International Society for Optical Engineering	9 国際会議録 Methacrylate resists and antireflective coatings for 193-nm lithography Taylor, G. N., Trefonas, P., Szmanda, C. R., Barclay, G. G., Kavanagh, R. J., Blacksmith, R. F., Joesten, L. A., … SPIE - The International Society of Optical Engineering
4 国際会議録 Second-generation 193-nm bilayer resist Foster, P., Steinhausler, T., Biafore, J. J., Spaziano, G., Slater, S. G., Blakeney, A. J. SPIE - The International Society of Optical Engineering	10 国際会議録 Modeling chemically amplified resists for 193-nm lithography Croffie,E.H., Cheng,M., Neureuther,A.R., Houlihan,F.M., Cirelli,R.A., Sweeney,J.R., Dabbagh,G., Watson,G.P., … SPIE - The International Society for Optical Engineering
5 国際会議録 Pattern collapse in high-aspect-ratio DUV and 193-nm resists Domke,W.D., Graffenberg,V.L., Patel,S., Rich,G.K., Cao,H.B., Nealey,P.F. SPIE - The International Society for Optical Engineering	11 国際会議録 Effects of airborne molecular contamination on 157-nm resists: AMC friend or foe? Meute, J.J., Rich, G., Turnquest, K., Dean, K., Patel, S., Graffenberg, V.L., Rodriguez, M.P. SPIE - The International Society of Optical Engineering
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