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Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells:effect of low-temperature heat treatment in N2

著者名:
Potter,R.J. ( Univ.of Essex )
Balkan,N.
Adams,M.J.
Chalker,P.R.
Joyce,T.B.
Bullough,T.J.
さらに 1 件
掲載資料名:
Physics and simulation of optoelectronic devices VIII : 24-28 January 2000, San Jose, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3944
発行年:
2000
巻:
Part2
開始ページ:
900
終了ページ:
909
出版情報:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819435613 [0819435619]
言語:
英語
請求記号:
P63600/3944
資料種別:
国際会議録

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