Using the surface charge profiler for in-tine monitoring of doping concentration in silicon epitaxial wafer manufacturing
- 著者名:
- Tower,J.P. ( QC Solutions Inc. )
- Kamieniecki,E.
- Nguyen,M.C.
- Danel,A.
- 掲載資料名:
- In-Line Methods and Monitors for Process and Yield Improvement
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3884
- 発行年:
- 1999
- 開始ページ:
- 174
- 終了ページ:
- 181
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819434814 [0819434817]
- 言語:
- 英語
- 請求記号:
- P63600/3884
- 資料種別:
- 国際会議録
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10
国際会議録
Characterization of High-K Dielectrics Using the Non-Contact Surface Charge Profiler (SCP) Method
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