Hot-carrier degradation study of high-density plasma(HDP)oxide deposition process in deep-submicron NMOSFETs

Hot-carrier degradation study of high-density plasma(HDP)oxide deposition process in deep-submicron NMOSFETs

著者名:

Yao,P. ( Chartered Semiconductor Manufacturing Ltd. )
Zeng,X.
Lo,K.F.
Guo,Q.
Tan,P.Y.

掲載資料名:

In-Line Methods and Monitors for Process and Yield Improvement

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3884

発行年:

1999

開始ページ:

116

終了ページ:

123

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434814 [0819434817]

言語:

英語

請求記号:

P63600/3884

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018101
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : In-Line Methods and Monitors for Process and Yield Improvement
回次:	1999
会議開催地:	Santa Clara, CA, USA
会議開催年:	1999.09.22-1999.09.23

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