Uniformity control of 3-inch GaN/InGaN layers grown in planetary reactors(R)

Uniformity control of 3-inch GaN/InGaN layers grown in planetary reactors(R)

著者名:

掲載資料名:

Morphological and compositional evolution of heteroepitaxial semiconductor thin films : symposium held April 24-27, 2000, San Francisco, California

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

618

発行年:

2000

開始ページ:

297

出版情報:

Warrendale, Pennsylvania.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995260 [1558995269]

言語:

英語

請求記号:

M23500/618

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018049
シリーズID:	PA00000011
会議名:	Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films : Symposium
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

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