IMPROVEMENT OF THE STRUCTURAL QUALITY OF GaAs LAYERS GROWN ON Si WITH LT-GaAs INTERMEDIATE LAYER

IMPROVEMENT OF THE STRUCTURAL QUALITY OF GaAs LAYERS GROWN ON Si WITH LT-GaAs INTERMEDIATE LAYER

著者名:

掲載資料名:

Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

325

発行年:

1994

開始ページ:

377

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992245 [1558992243]

言語:

英語

請求記号:

M23500/325

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018005
シリーズID:	PA00000011
会議名:	Symposium on physics and applications of defects in advanced semiconductors
回次:	1993
会議開催地:	Boston, MA, USA
会議開催年:	1993.11.29-1993.12.01

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