PLASMA SURFACE INTERACTIONS AND SURFACE PRORERTIES FOR REMOTE H-PLASMA CLEANING OF Si(100)

PLASMA SURFACE INTERACTIONS AND SURFACE PRORERTIES FOR REMOTE H-PLASMA CLEANING OF Si(100)

著者名:

掲載資料名:

Surface chemical cleaning and passivation for semiconductor processing

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

315

発行年:

1993

開始ページ:

197

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992139 [1558992138]

言語:

英語

請求記号:

M23500/315

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00018004
シリーズID:	PA00000011
会議名:	Symposium on surface chemical cleaning and passivation for semiconductor processing ; Materials Research Society Spring Meeting
回次:	1993
会議開催地:	San Francisco, California, USA
会議開催年:	1993.04.13-1993.04.15

類似資料:

1 国際会議録 PLASMA-SURFACE INTERACTION LIMITS FOR REMOTE H-PLASMA CLEANING OF Si(100) Schneider, T.P., Bernhard, B.L., Chen, Y.L., Nemanich, R.J. Materials Research Society	7 国際会議録 Removal of SiO2 from Si(100) by Remote H2/SiH4 Plasma Prior to Epitaxial Growth Barnak, J. P., Ying, H., Chen, Y. L., Montgomery, J., Nemanich, R. J. MRS - Materials Research Society
2 国際会議録 REDUCTION OF SURFACE ROUGHENING AND SUBSURFACE DEFECTS IN H-PLASMA CLEANING OF Si (100) Schneider, T.P., Montgomery, J.S., Ying, H., Barnak, J.P., Chen, Y.L., Maher, D.M., Nemanich, R.J. Electrochemical Society	8 国際会議録 Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF … Yasuda, T., Ma, Y., Habermehl, S., Kim, S.S., Lucovsky, G., Schneider, T.P., Cho, J., Nemanich R.J. Materials Research Society
3 国際会議録 SURFACE ELECTRONIC STATES OF LOW TEMPERATURE H-PLASMA CLEANED Si(100) AND Ge(100) SURFACES Cho, Jaewon, Schneider, T.P., Nemanich, R.J. Materials Research Society	9 国際会議録 Removal of Fluorine from a Si(100) Surface by a Remote rf hydrogen Plasma Barnak, J. P., King, S., Montgomery, J., Ku, Ja-Hum, Nemanich, R. J. MRS - Materials Research Society
4 国際会議録 A STUDY OF SURFACE AND SUBSURFACE PROPERTIES OF Si(100) AFTER HYDROGEN ION-BEAM EXPOSURE Liu, H. X., Schneider, T. P., Montgomery, J., Chen, Y. L., Buczkowski, A., Shimura, F., Nemanich, R. J., Maher, D. M., … MRS - Materials Research Society	10 国際会議録 RIE Passivation Layer Removal by Remote H-Plasma and H2/SiH4 Plasma Processing Ying, Hong, Barnak, J. P., Chen, Y. L., Nemanich, R. J. MRS - Materials Research Society
5 国際会議録 PROCESS AND SURFACE CHARACTERIZATION OF HYDROGEN PLASMA CLEANING OF Si(100) Schneider, T.P., Cho, J., Vander Weide, J., Wells, S.E., Lucovsky, G, Nemanich, R.J., Mantini, M.J., Rudder, R.A., … Materials Research Society	11 国際会議録 INFLUENCE OF SURFACE PRE-CLEANING ON ELECTRICAL PROPERTIES OF RAPID THERMAL OXIDE AND RAPID THERMAL CHEMICAL VAPOR DEPOSITION OXIDE Xu, Xiaoli, Kuehn, R.T., Melzak, J.M., Hames, G.A., Wortman, J.J., Ozturk, M.C., Nemanich, R.J., Harris, G., Maher, D. Materials Research Society
6 国際会議録 LOW TEMPERATURE HYDROGEN PLASMA CLEANING PROCESSES OF Si(100), Ge(100), AND SixGe1-x(100) Schneider, T.P., Aldrich, D.A., Cho, J., Nemanich, R.J. Materials Research Society	12 国際会議録 Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation Montgomery, J. S., Barnak, J. P., Silvestre, C., Hauser, J. R., Nemanich, R. J. MRS - Materials Research Society

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