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Electrical Active Defects in the Band-Gap Induced by Ge-Pre-Amorphization of Si-Substrates

著者名:
Boussaid, F.
Olivie, F.
Benzohra, M.
Alquier, D.
Claverie, A.
Martinez, A.
さらに 1 件
掲載資料名:
Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
532
発行年:
1998
開始ページ:
85
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994386 [1558994386]
言語:
英語
請求記号:
M23500/532
資料種別:
国際会議録

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