Persistent Photoconductivity in AlGaN Films Grown by MOCVD

Persistent Photoconductivity in AlGaN Films Grown by MOCVD

著者名:

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

537

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

類似資料:

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2 国際会議録 Deep centers and persistent photoconductivity studies in variously grown GaN films Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Usikov, A. S., Shmidt, N. M., Pushnyi, B. V., Tsvetkov, D. V., … MRS-Materials Research Society	8 国際会議録 Interface Effects on the Persistent Photoconductivity in Thin GaN and AlGaN Films Seifert, O. P., Kirfel, O., Munzel, M., Hirsch, M. T., Parisi, J., Kelly, M., Ambacher, O., Stutzmmann, M. MRS - Materials Research Society
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