The Role of the In Source in InN Growth From Molecular Beams

The Role of the In Source in InN Growth From Molecular Beams

著者名:

Donovan, S. M.

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

525

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

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2 国際会議録 Surface Chemical Treatment For The Cleaning of AlN and GaN Lee, K.-N., Donovan, S.M., Gila, B., Overberg, M., Mackenzie, J.D., Abernathy, C.R. Electrochemical Society	8 国際会議録 Role of C. O and H in III-Nitrides Abernathy, C. R., Pearton, S. J., Mackenzie, J. D., Lee, J. W., Vartuli, C. B., Wilson, R. G., Shul, R. J., Zolper, J. … MRS - Materials Research Society
3 国際会議録 InN-Based Ohmic Contacts to AlInN Donovan, S. M., Ren, F., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Jones, K. MRS - Materials Research Society	9 国際会議録 AIN GROWN BY METALORGANIC MOLECULAR BEAM EPITAXY Mackenzie, J. D., Abernathy, C. R., Pearton, S. J., Wilson, R. G. MRS - Materials Research Society
4 国際会議録 Dry Etch Damage in InN, InGaN and InAlN Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., … MRS - Materials Research Society	10 国際会議録 Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN Cho, Hyun, Maeda, T., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., Han, J., Ren, F. MRS - Materials Research Society
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