Low-Temperature Homoepitaxial Growth of GaN Using Hyperthermal Molecular Beams

Low-Temperature Homoepitaxial Growth of GaN Using Hyperthermal Molecular Beams

著者名:

Michel, A.

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

437

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

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