Comparison of High Field Characteristics of SiO2 and AlN Gate Insulators in 6H SiC MOS Capacitors

Comparison of High Field Characteristics of SiO2 and AlN Gate Insulators in 6H SiC MOS Capacitors

著者名:

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

345

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

類似資料:

1 国際会議録 A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors Madangarli,V.P., Sudarshan,T.S. Trans Tech Publications	7 国際会議録 Reliability Characteristics of MOS Capacitors with CVD Ta205/N20-Grown SiO2 Stacked Gate Dielectrics Sun, S.C., Huang, Y.L. Electrochemical Society
2 国際会議録 Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique Sudarshan, T. S., Madangarli, V. P., Gradinaru, G., Tin, C. C., Hu, R., Isaacs-Smith, T. MRS - Materials Research Society	8 国際会議録 Impact of Al, Ni, and TiN Metal Gates On ZrO₂-MOS Capacitors S. M. Abermann, J. Efavi, A. Lugstein, E. Auer, H. Gottlob, M. Schmidt, H. Lemme, E. Bertagnolli Electrochemical Society
3 国際会議録 Comparison of Current - Voltage Characteristics of n - and p-Type 6H-SiC Schottky Diodes Zhang, Q., Madangarli, V., Gao, Y., Sudarshan, T.S. Materials Research Society	9 国際会議録 Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC S. Chowdhury, K. Yamamoto, C. Hitchcock, T.P. Chow Trans Tech Publications
4 国際会議録 SiC Epitaxial Growth on Carbon Khlebnikov, I., Madangarli, V., Sudarshan, T. S. MRS - Materials Research Society	10 国際会議録 The Response of High-Voltage 4H-SiC p-n Junction Diodes to Different Edge-Termination Techniques Oder, T. N., Tin, C. C., Williams, J. R., Isaacs-Smith, T., Madangarli, V., Sudarshan, T. S. MRS - Materials Research Society
5 国際会議録 Rapid Anodic Oxidation of 6H-SiC Khlebnikov,Y., Madangarli,V.P., Khan,M.A., Sudarshan,T.S. Trans Tech Publications	11 国際会議録 Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination Zhang, Q., Madangarli, V., Tarplee, M., Sudarshan, T. S. Trans Tech Publications
6 国際会議録 High Electric Field Breakdown of 4H-SiC p-n Junction Diodes Tin, C. C., Madangarli, V., Hu, R., Luckowski, E., Casady, J., Isaacs-Smith, T., Gradinaru, G., Sudarshan, T. S., … MRS - Materials Research Society	12 国際会議録 The Influence of Gate Material, SiO₂ Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors T. Gutt, T. Malachowski, H.M. Przewłocki, O. Engström, M. Bakowski Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12