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Incorporation of Er Into GaN by In Situ Doping During Halide Vapor-Phase Epitaxy

著者名:
掲載資料名:
Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
512
発行年:
1998
開始ページ:
327
出版情報:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994188 [1558994181]
言語:
英語
請求記号:
M23500/512
資料種別:
国際会議録

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