Bulk Breakdown in AlGaN/GaN HFETs

Bulk Breakdown in AlGaN/GaN HFETs

著者名:

Gradinaru, G.

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

309

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

類似資料:

1 国際会議録 Power Limitation Due to Premature Breakdown in AlGaN/GaN HFETs Gradinaru, G., Kao, N. C., Yang, J., Chen, Q., Khan, M. A., Sudarshan, T. S. MRS - Materials Research Society	7 国際会議録 Double-Channel AlGaN/GaN Heterostructure Field-Effect Transistor Gaska, R., Shur, M. S., Yang, J. W., Fjeldly, T. A. MRS - Materials Research Society
2 国際会議録 High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., … Materials Research Society	8 国際会議録 Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphire substrates Pala, N., Gaska, R., Shur, M., Yang, J. W., Khan, M. A. MRS-Materials Research Society
3 国際会議録 Stimulated Emission at 258 nm in AIN/AlGaN QuantumWells Grown on Bulk AIN Substrates Gaska, R., Fareed, Q., Tamulaitis, G., Yilmaz, I., Shur, M. S., Chen, C., Yang, J., Kuokstis, E., Khan, A., Rojo, J. C., … Materials Research Society	9 国際会議録 Negative differential conductivity in AlGaN/GaN HEMTs: Real space charge transfer from 2D to 3D GaN states? Deng, J., Gaska, R., Shur, M. S., Khan, M. A., Yang, J. W. MRS-Materials Research Society
4 国際会議録 *AlGaN microwave power HFETs on insulating SiC substrates Sullivan, G., Gertner, E., Pittman, R., Chen, M., Pierson, R., Higgins, A., Chen, Q., Yang, J-W., Smith, R. P., Perez, … MRS-Materials Research Society	10 国際会議録 High Electric Field Breakdown of 4H-SiC p-n Junction Diodes Tin, C. C., Madangarli, V., Hu, R., Luckowski, E., Casady, J., Isaacs-Smith, T., Gradinaru, G., Sudarshan, T. S., … MRS - Materials Research Society
5 国際会議録 The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN Tamulaitis, G., Yilmaz, I., Shur, M.S., Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Rojo, J.C., Schowalter, … Materials Research Society	11 国際会議録 Stimulated Emission in InGaN/GaN Quantum Wells Jursenas, S., Miasojedovas, S., Kurilcik, N., Kurilcik, G., Zukauskas, A., Yang, J., Asif Khan, M., Shur, M.S., Gaska, … Trans Tech Publications
6 国際会議録 Recent Progress in AlGaN/GaN Based Optoelectronic Devices Khan, M. A., Chen, Q., Sun, C. J., Yang, J. W., Shur, M. S. MRS - Materials Research Society	12 国際会議録 Self-Heating Effects in High-Power AlGaN/GaN HFETs Kuball, M., Uren, M.J., Hayes, J.M., Martin, T., Birbeck, J.C.H., Balmer, R.S., Hughes, B.T. Materials Research Society

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