MOCVD Growth of GaN on Silicon and Related Surfaces

MOCVD Growth of GaN on Silicon and Related Surfaces

著者名:

掲載資料名:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

512

発行年:

1998

開始ページ:

53

出版情報:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

言語:

英語

請求記号:

M23500/512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017997
シリーズID:	PA00000011
会議名:	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
回次:	1998
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.14

類似資料:

1 国際会議録 Microstructure of GaN Grown on (111) Si by MOCVD Follstaedt, D. M., Han, J., Provencio, P., Fleming, J. G. MRS - Materials Research Society	7 国際会議録 LP-MOCVD Growth of GaAlN/GaN Heterostructures on Silicon Carbide: Application to HEMT's Devices Di Forte Poisson, M-A., Magis, M., Tordjman, M., Aubry, R., Pesohang, M., Delage, S.L., Persio, J. Di, Grimbert, B., … Materials Research Society
2 国際会議録 Growth of GaN on Thin Si{111} Layers Bonded to Si{100} Substrates Fleming, J. G., Han, J. MRS - Materials Research Society	8 国際会議録 Interaction of deuterium with internal surfaces in silicon Myers,S.M., Follstaedt,D.M., Stein,H.J., Wampler,W.R. Trans Tech Publications
3 国際会議録 Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides Ashby, C.I.H., Willan, C.C., Han, J., Missert, N.A., Provencio, P.P., Follstaedt, D.M., Peake, G.M., Griego, L. Electrochemical Society	9 国際会議録 MOCVD Growth of AlGaInN for UV Emitters Han, J., Crawford, M. Electrochemical Society
4 国際会議録 Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC Bassim, N.D., Twigg, M.E., Mastro, M.A., Neudeck, P.G., Eddy, C.R.Jr., Henry, R.L., Holm, R.N., Powell, J.A., Trunek, … Trans Tech Publications	10 国際会議録 The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire Ng, T. B., Han, J., Biefeld, R. M., Zolper, J. C., Crawford, M. H., Follstaedt, D. M. MRS - Materials Research Society
5 国際会議録 Correlation of Surface Morphology and Optical Properties of GaN by Conventional and Selective-Area MOCVD Li, X., Jones, A. M., Roh, S. D., Turnbull, D. A., Reuter, E. E., Gu, S. Q., Bishop, S. G., Coleman, J. J. MRS - Materials Research Society	11 国際会議録 *In-Situ Monitoring during MOCVD of GaN Han, Jung, Figiel, J.J., Crawford, M.H., Floro, J.A. Electrochemical Society
6 国際会議録 Growth of GaN Based Devices by Production Scale MOCVD Schurman, M.J., Tran, C.A., Karlicek, R.F., Jr., Li, Y., Eliashevich, I., Brown, M.G., Ferguson, I., Koszi, L., Stall, … Electrochemical Society	12 国際会議録 Scratch-Related Effects on Silicon Surface Shreter,Y.G., Rebane,Y.T., Tarhin,D.V., Cherns,D., Steeds,J.W. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12