The First Nitride Laser Diode on Silicon Carbide | 東京工業大学附属図書館文献データベース

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The First Nitride Laser Diode on Silicon Carbide

著者名:

Swindell, J. T.

Johnson, M. A. L.

Schetzina, J. F.

Sheppard, S. T.

さらに 9 件

掲載資料名:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

482

発行年:

1998

開始ページ:

1179

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

言語:

英語

請求記号:

M23500/482

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017994
シリーズID:	PA00000011
会議名:	Symposium on nitride semiconductors
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

類似資料:

1 国際会議録 Status of Nitride-Based Light-Emitting and Laser Diodes on SiC Doverspike, K., Bulman, G. E., Sheppard, S. T., Kong, H. S., Leonard, M., Dieringer, H., Weeks, T. W., Jr., Edmond, J., … MRS - Materials Research Society	7 国際会議録 InGaN/GaN MQW SCH lasers grown on SiC Bulman,G.E., Doverspike,K., Haberern,K.W., Dieringer,H., Kong,H.S., Edmond,J.A., Song,Y.-K., Kuball,M., Nurmikko,A.V. SPIE - The International Society for Optical Engineering
2 国際会議録 Nitride-Based Emitters on SiC Substrates Edmond,J., Bulman,G., Kong,H.S., Leonard,M., Doverspike,K., Weeks,W., Niccum,J., Sheppard,S.T., Negley,G., Slater,D., … Trans Tech Publications	8 国際会議録 A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications Johnson, M. A. L., Yu, Z., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., Edmond, J. A., Cook, J. W., Jr., … MRS - Materials Research Society
3 国際会議録 Nitride-based emitters on SiC substrates Edmond,J.A., Kong,H.-S., Leonard,M.T., Doverspike,K., Bulman,G.E., Weeks,W., Irvine,K.G., Dmitriev,V.A. SPIE-The International Society for Optical Engineering	9 国際会議録 Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide Sheppard, S. T., Doverspike, K., Leonard, M., Pribble, W. L., Allen, S. T., Palmour, J. W. Trans Tech Publications
4 国際会議録 InGaN/GaN lasers grown on SiC (Invited Paper) Doverspike,K., Bulman,G.E., Sheppard,S.T., Kong,H.S., Leonard,M.T., Dieringer,H., Edmond,J.A., More,K.L., Song,Y.-K., … SPIE-The International Society for Optical Engineering	10 国際会議録 Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates Yu, Z., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Jr., Schetzina, J. F., Haberern, K. … MRS - Materials Research Society
5 国際会議録 MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple rf Plasma Sources Johnson, M. A. L., Yu, Zhonghai, Boney, C., Rowland, W. H., Jr., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., … MRS - Materials Research Society	11 国際会議録 Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates Johnson, M. A. L., Yu, Zhonghai, Boney, C., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., Zhao, H., Skromme, B. J., … MRS - Materials Research Society
6 国際会議録 Pendeoepitaxy of GaN and In GaN LEDs on SiC Kong, H. S., Edmond, J., Doverspike, K., Emerson, D., Bulman, G., Haberern, K., Dieringer, H., Slater, D. Trans Tech Publications	12 国際会議録 Recent progress in AIGaN/GaN laser structures on 6H-SiC Bulman,G.E., Edmond,J.A., Dmitriev,V.A., Kong,H.-S., Leonard,M.T., Irvine,K.G., Nikolaev,V.I., Zubrilov,A.S., … SPIE-The International Society for Optical Engineering

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