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Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVD

著者名:
掲載資料名:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
482
発行年:
1998
開始ページ:
1101
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
言語:
英語
請求記号:
M23500/482
資料種別:
国際会議録

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