Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
- 著者名:
Suski, T. Jun, J. Leszczynski, M. Teisseyre, H. Grzegory, I. Porowski, S. Baranowski, J. M. Rocket, A. Strite, S. Stonert, A. Turos, A. Tan, H. H. Williams, J. S. Jagadish, C. - 掲載資料名:
- Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 482
- 発行年:
- 1998
- 開始ページ:
- 949
- 出版情報:
- Warrendale, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993877 [1558993878]
- 言語:
- 英語
- 請求記号:
- M23500/482
- 資料種別:
- 国際会議録
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