Dislocations in GaN/Sapphire: Their Distribution and Effect on Stress and Optical Properties

Dislocations in GaN/Sapphire: Their Distribution and Effect on Stress and Optical Properties

著者名:

Jain, S. C.

掲載資料名:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

482

発行年:

1998

開始ページ:

875

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

言語:

英語

請求記号:

M23500/482

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017994
シリーズID:	PA00000011
会議名:	Symposium on nitride semiconductors
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

類似資料:

1 国際会議録 Measurement of Nonuniform Stresses in Semiconductors by the Micro-Raman Method Pinardi, K., Jain, S. C., Maes, H. E., Overstraeten, R. Van, Willander M., Atkinson, A. MRS - Materials Research Society	7 国際会議録 Understanding GaN nucleation layer evolution on sapphire and its impact on GaN dislocation density D. D. Koleske, M. E. Coltrin, S. R. Lee, G. Thaler, K. C. Cross Society of Photo-optical Instrumentation Engineers
2 国際会議録 Substrate Stresses in Heterostructures Pinardi,K., Jain,S.C., Maes,H.E., Atkinson,A. SPIE-The International Society for Optical Engineering, Narosa	8 国際会議録 Advances in Organic Blue and Green Light Sources:Comparison with GaN- and ZnSe-Based Devices Jain,S.C., Geens,W., Poortmans,J., Heremans,P., Nijs,J., Mertens,R., Willander,M. SPIE - The International Society for Optical Engineering
3 国際会議録 Finite Element Calculations to Optimize the Design of a Stressor for Strained Induced Quantum Wires and Quantum Dots in GaAs Pinardi, K., Jain, S. C., Maes, H. E. MRS - Materials Research Society	9 国際会議録 The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire Ng, T. B., Han, J., Biefeld, R. M., Zolper, J. C., Crawford, M. H., Follstaedt, D. M. MRS - Materials Research Society
4 国際会議録 Unified Fe Calculations of Stresses in Locos,Stripes and Quantum Device Heterostructures Jain,S.C., Pinardi,K., Maes,H. SPIE-The International Society for Optical Engineering, Narosa	10 国際会議録 Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire Niebuhr, R., Bachem, K. H., Behr, D., Hoffmann, C., Kaufmann, U., Lu, Y., Santic, B., Wagner, J., Arlery, M., Rouviere, … MRS - Materials Research Society
5 国際会議録 Measurement of Residual Stress in Thin Films Using the Optical Microprobe Atkinson, A., Clarke, D. R., Jain, S. C., Pinardi, K., Webb, S. MRS - Materials Research Society	11 国際会議録 Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MOVPE Datta, R., Kappers, M. J., Barnard, J. S., Humphreys, C. J. Materials Research Society
6 国際会議録 Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE Dunn, K. A., Babcock, S. E., Vaudo, R., Phanse, V., Redwing, J. MRS - Materials Research Society	12 国際会議録 Dislocation arrangement in a thick LEO GaN film on sapphire Dunn, K. A., Babcock, S. E., Stone, D. S., Matyi, R. J., Zhang, L., Kuech, T. F. MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12