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Local Electronic Structure of Defects in GaN From Spatially Resolved Electron Energy-Loss Spectroscopy

著者名:
Natusch, M. K. H.
Botton, G. A.
Broom, R. F.
Brown, P. D.
Tricker, D. M.
Humphreys, C. J.
さらに 1 件
掲載資料名:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
482
発行年:
1998
開始ページ:
763
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
言語:
英語
請求記号:
M23500/482
資料種別:
国際会議録

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