Observation of Native Ga Vacancies in GaN by Positron Annihilation | 東京工業大学附属図書館文献データベース

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Observation of Native Ga Vacancies in GaN by Positron Annihilation

著者名:

Baranowski, J. M.

Stepniewski, R.

Leszczynski, M.

さらに 10 件

掲載資料名:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

482

発行年:

1998

開始ページ:

757

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

言語:

英語

請求記号:

M23500/482

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017994
シリーズID:	PA00000011
会議名:	Symposium on nitride semiconductors
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

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2 国際会議録 Growth and Properties of Bulk Single Crystals of GaN Suski, T., Perlin, P., Leszczynski, M., Teisseyre, H., Grzegory, I., Jun, J., Bockowski, M., Porowski, S., Pakula, K., … MRS - Materials Research Society	8 国際会議録 Interactions of LO Phonons With Bound Excitons in Homoepitaxial GaN Korona, K. P., Wysmolek, A., Baranowski, J. M., Pakula, K., Bergman, J. P., Monemar, B., Grzegory, I., Porowski, S. MRS - Materials Research Society
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