Amorphous Domains in GaN Layers Grown on 6H-SiC by MBE

Amorphous Domains in GaN Layers Grown on 6H-SiC by MBE

著者名:

Vermaut, P.

掲載資料名:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

482

発行年:

1998

開始ページ:

429

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

言語:

英語

請求記号:

M23500/482

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017994
シリーズID:	PA00000011
会議名:	Symposium on nitride semiconductors
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

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2 国際会議録 Low-Angle and High-Angle Grain Boundaries in AlN/GaN Layers Grown on (0001) Sapphire by MBE Potin, V., Ruterana, P., Hairie, A., Nouet, G. MRS - Materials Research Society	8 国際会議録 Modified Stillinger-Weber Potential for Planar Defects Modeling in GaN Bere,A., Vermaut,P., Hairie,A., Paumier,E., Ruterana,P., Nouet,G. Trans Tech Publications
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4 国際会議録 HREM and CBED Studies of Polarity of Nitride Layers With Prismatic Defects Grown Over SiC Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., Morkoc, H. MRS - Materials Research Society	10 国際会議録 The Structure of Threading Dislocations Generated at the GaN/Al2O3 Interface Ruterana,P., Potin,V., Nouet,G. Trans Tech Publications
5 国際会議録 The Core Structure of Pure Edge Threading Dislocations in GaN Layers Grown on (0001)SiC or Sapphire by MBE Ruterana, P., Potin, V., Nouet, G. MRS - Materials Research Society	11 国際会議録 The Atomic Structure of Mosaic Grain Boundary Dislocations in GaN Epitaxial Layers Nouet, G., Pond, R. C., Potin, V., Ruterana, P. Materials Research Society
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