A Combined TEM/RHEED, SEM/CL Study of Epitaxial GaN | 東京工業大学附属図書館文献データベース

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A Combined TEM/RHEED, SEM/CL Study of Epitaxial GaN

著者名:

Galloway, S. A.

Humphreys, C. J.

さらに 4 件

掲載資料名:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

482

発行年:

1998

開始ページ:

399

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

言語:

英語

請求記号:

M23500/482

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017994
シリーズID:	PA00000011
会議名:	Symposium on nitride semiconductors
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

類似資料:

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2 国際会議録 A TEM Study of the Microstructural Evolution of MBE-Grown GaN Tricker, David M., Brown, Paul D., Martin, Graeme., Lu, J., Westwood, D. I., Hill, P., Haworth, L., MacDonald, J. E., … MRS - Materials Research Society	8 国際会議録 TEM Study of Defects in Laterally Overgrown GaN Layers Liliental-Weber, Z., Benamara, M., Swider, W., Washburn, J., Park, J., Grudowski, P. A., Eiting, C. J., Dupuis, R. D. MRS - Materials Research Society
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