Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers

Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers

著者名:

掲載資料名:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

482

発行年:

1998

開始ページ:

301

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

言語:

英語

請求記号:

M23500/482

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017994
シリーズID:	PA00000011
会議名:	Symposium on nitride semiconductors
回次:	1997
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

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2 国際会議録 Selective Growth GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy Nam, O. H., Bremser, M. D., Ward, B. L., Nemanich, R. J., Davis, R. F. MRS - Materials Research Society	8 国際会議録 Lateral- and Pendeo-epitaxial Growth and Defect Reduction in GaN Thin Films Davis, R. F., Nam, O. -H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., Rajagopal, P. Trans Tech Publications
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6 国際会議録 Lateral Epitaxy Formation Mechanism and Microstructure of Selectively Grown GaN Structures Zheleva, Tsvetanka, Nam, Ok-Hyun, Griffin, Jason D., Bremser, Michael D., Davis, Robert F. MRS - Materials Research Society	12 国際会議録 Chemical considerations regarding the vapor-phase epitaxy of binary and ternary III-nitride thin films Davis, Robert F., Bremser, Michael D., Nam, Ok-Hyun, Perry, William G., Zheleva, Tsvetanka, Ailey, K. Shawn American Chemical Society

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