Growth and Characterization of InAsxP1-x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Eptiaxy

Growth and Characterization of InAsxP1-x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Eptiaxy

著者名:

Kuo, H. C.

掲載資料名:

Infrared applications of semiconductors - materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

450

発行年:

1997

開始ページ:

153

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993549 [1558993541]

言語:

英語

請求記号:

M23500/450

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017991
シリーズID:	PA00000011
会議名:	Symposium on infrared applications of semiconductors
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.05

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