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MBE Growth of InSb Based Device Structures Onto InSb(111)A,(111)B and InGaSb(111)A Substrates

著者名:
Johnson, A. D.
Jefferies, R.
Pryce, G. J.
Beswick, J. A.
Ashley, T.
Newey, J.
Elliot, C. T.
Martin, T.
さらに 3 件
掲載資料名:
Infrared applications of semiconductors - materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
450
発行年:
1997
開始ページ:
103
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993549 [1558993541]
言語:
英語
請求記号:
M23500/450
資料種別:
国際会議録

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