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Electronic Structure and Gate Capacitance-Voltage Characteristics of MBE Silicon ｦﾄ-FETs

著者名:
掲載資料名:
Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
439
発行年:
1997
開始ページ:
161
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993433 [1558993436]
言語:
英語
請求記号:
M23500/439
資料種別:
国際会議録

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