An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV

An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV

著者名:

掲載資料名:

Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

439

発行年:

1997

開始ページ:

107

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993433 [1558993436]

言語:

英語

請求記号:

M23500/439

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017990
シリーズID:	PA00000011
会議名:	Symposium on microstructure evolution during irradiation
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.05

類似資料:

1 国際会議録 An Electronic Stopping Power Model in Single-Crystal Silicon from a Few KeV to Several MeV Morris, S. J., Obradovic, B., Yang, S-H., Tasch, A. F., Rubin, L. MRS - Materials Research Society	7 国際会議録 Experimental verification of a new physically based low-energy (<5 keV) ion implant model Obradovic,B.J., Morris,S.J., Morris,M.F., Tian,S., Wang,G., Beardmore,K., Snell,C.M., Jackson,J., Baumann,S., Tasch,A.F. SPIE-The International Society for Optical Engineering
2 国際会議録 A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon Yang, S.-H., Morris, S., Tian, S., Parab, K., Tasch, A. F., Echenique, P. M., Capaz, R., Joannopoulos, J. MRS - Materials Research Society	8 国際会議録 A NEW COMPUTATIONALLY-EFFICIENT 2-D MODEL FOR BORON IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON Morris, Steven J., Yang, Shyh-Horng, Lim, David H., Tasch, Al F. MRS - Materials Research Society
3 国際会議録 Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon Obradovic,B.J., Morris,S.J., Morris,M.F., Tian,S., Wang,G., Beardmore,K., Snell,C., Jackson,J., Baummann,S., Tasch,A.F. SPIE-The International Society for Optical Engineering	9 国際会議録 Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through … Morris, S., Lim, D., Yang, S. -H., Tian, S., Parab, K., Tasch, A. F. MRS - Materials Research Society
4 国際会議録 Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach Tian, S., Morris, M., Morris, S. J., Obradovic, B., Tasch, A. F. MRS - Materials Research Society	10 国際会議録 A NEW COMPUTATIONALLY-EFFICIENT TWO-DIMENSIONAL MODEL FOR BORON IMPLANTATION INTO SINGLE-CRYSTAL SILICON Klein, K. M., Park, C., Yang, S., Morris, S., Do, V., Tasch, A. F. Materials Research Society
5 国際会議録 Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach Tian, S., Morris, M., Morris, S. J., Obradovic, B., Tasch, A. F. MRS - Materials Research Society	11 国際会議録 A MORE EFFICIENT APPROACH FOR MONTE CARLO SIMULATION OF DEEPLY-CHANNELED IMPLANTED PROFILES IN SINGLE-CRYSTAL SILICON Yang, Shyh-Horng, Lim, David, Morris, Steven J., Tasch, Al F. MRS - Materials Research Society
6 国際会議録 An Accurate Monte Carlo Binary Collision Model for BF2 Implants into (100) Single-Crystal Silicon Yang, S.-H., Morris, S., Tian, S., Morris, M., Parab, K., Obradovich, B., Tasch, A. Electrochemical Society	12 国際会議録 Computationally efficient ion implantation damage model: modified Kinchin-Pease model Wang,G., Tian,S., Morris,M.F., Morris,S.J., Obradovic,B.J., Balamurugan,G., Tasch,A.F. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12