Electron Cyclotron Resonance in Strained Si and Si0.94Ge0.06 Channels on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition

Electron Cyclotron Resonance in Strained Si and Si0.94Ge0.06 Channels on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition

著者名:

掲載資料名:

Rapid thermal and integrated processing V : symposium held April 8-12, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

429

発行年:

1996

開始ページ:

373

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993327 [1558993320]

言語:

英語

請求記号:

M23500/429

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017989
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal and integrated processing
回次:	5th
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

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