STRUCTURAL AND ELECTRICAL PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON GROWN BY 70 MHz AND 13.56 MHz PECVD | 東京工業大学附属図書館文献データベース

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STRUCTURAL AND ELECTRICAL PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON GROWN BY 70 MHz AND 13.56 MHz PECVD

著者名:

さらに 6 件

掲載資料名:

Microcrystalline and nanocrystalline semiconductors : Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

358

発行年:

1995

開始ページ:

751

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992597 [1558992596]

言語:

英語

請求記号:

M23500/358

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017983
シリーズID:	PA00000011
会議名:	Symposium on microcrystalline and nanocrystalline semiconductors
回次:	1994
会議開催地:	Boston, MA, USA
会議開催年:	1994.11.29-1994.12.02

類似資料:

1 国際会議録 INFLUENCE OF CARBON ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF MICROCRYSTALLINE SILICON CARBIDE Demichelis, F., Pirri, C.F., Tresso, E., DellaMea, G., Quaranta, A., Rigato, V., Ferraris, M., Rava, P. Materials Research Society	7 国際会議録 Comparison Of Structural Properties And Solar Cell Performance Of a-Si:H Films Prepared At Various Deposition Rates Using 13.56 And 70 MHz PECVD Methods Deng, X., Izu, M., Jones, S. J., Liu, T., Williamson, D. L. Materials Research Society
2 国際会議録 PHYSICAL PROPERTIES OF UNDOPED AND DOPED MICROCRYSTALLINE SiC:H DEPOSITED BY PECVD Demichelis, F., Pirri, C.F., Tresso, E., DellaMea, G., Rigato, V., Rava, P. Materials Research Society	8 国際会議録 High Rate Deposition Of Microcrystalline Silicon Solar Cells Using 13.56 Mhz Pecvd - Prerequisites And Limiting Factors Roschek, Tobias, Repmann, Tobias, Kluth, Oliver, Muller, Joachim, Rech, Bernd, Wagner, Heribert Materials Research Society
3 国際会議録 STUDY ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF MICROCRYSTALLINE Si:H AND SiC:H FILMS Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E., Rubino, A., Nobile, G., Terzini, E., Conte, G. Materials Research Society	9 国際会議録 DOPED AMORPHOUS AND MICROCRYSTALLINE SILICON CARBIDE AS WIDE BAND-GAP MATERIAL Demichelis, F., Pirri, C.F., Tresso, E., Rava, P. Materials Research Society
4 国際会議録 Microcrystalline Silicon Solar Cells Prepared by 13.56 MHz PECVD at High Growth Rates: Solar Cell and Material Properties Roschek, Tobias, Rech, Bernd, Beyer, Wolfhard, Werner, Peter, Edelman, Felix, Chack, Albert, Weil, Raoul, Beserman, … Materials Research Society	10 国際会議録 CRYSTALLINITY AND OPTOELECTRONIC PROPERTIES OF μc-SiC:H Demichelis, F., Crovini, G., Osenga, C., Pirri, C.F., Tresso, E., Boarino, L. Materials Research Society
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6 国際会議録 UNDOPED AND PHOSPHORUS DOPED μ-SiC:H FILMS: INVESTIGATION OF ELECTRICAL PROPERTIES AND HALL EFFECT Pisarkiewicz, T., Stapinski, T., Demichelis, F., Pirri, C.F., Tresso, E., Rava, P. Materials Research Society	12 国際会議録 Polymorphous Silicon Films Produced in Large Area Reactors by PECVD at 27.12 MHz and 13.56 MHz Aguas, H., Raniero, L., Pereira, L., Fortunato, E., Cabarrocas, P. Roca i, Martins, R. Materials Research Society

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