COMPARISON OF THE BAND GAP OF POROUS SILICON AS MEASURED BY PHOTOELECTRON SPECTROSCOPY AND PHOTOLUMINESCENCE
- 著者名:
Buuren, T. van Eisebitt, S. Patitsas, S. Ritchie, S. Tiedje, T. Young, J. F. Gao, Yuan - 掲載資料名:
- Microcrystalline and nanocrystalline semiconductors : Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 358
- 発行年:
- 1995
- 開始ページ:
- 441
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992597 [1558992596]
- 言語:
- 英語
- 請求記号:
- M23500/358
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society | |
2
国際会議録
EFFECT OF PREPARATION CONDITIONS ON THE SILICON L-EDGE IN ELECTROCHEMICALLY PREPARED POROUS SILICON
Materials Research Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |