Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers

Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers

著者名:

掲載資料名:

Physics and Simulation of Optoelectronic Devices V

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2994

発行年:

1997

開始ページ:

542

終了ページ:

551

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819424051 [0819424056]

言語:

英語

請求記号:

P63600/2994

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017974
シリーズID:	PA00000029
会議名:	Photonics West : Physics and Simulation of Optoelectronic Devices
回次:	1997 : 5th
会議開催地:	San Jose, CA, USA
会議開催年:	1997.02.10-1997.02.14

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