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Mossbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGal-XAS

著者名:
Langouche,G.
Bemelmans,H.
Odeurs,J.
Borghs,G.
Potter,M.De
Deraedt,W.
Rossum,M.Van
さらに 2 件
掲載資料名:
Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988
シリーズ名:
Materials science forum
シリーズ巻号:
38-41
発行年:
1989
巻:
Part3
開始ページ:
1245
終了ページ:
1250
出版情報:
Aederlmannsdorf, Switzwelns: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495849 [0878495843]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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