Determination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAs

Determination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAs

著者名:

掲載資料名:

Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988

シリーズ名:

Materials science forum

シリーズ巻号:

38-41

発行年:

1989

巻:

Part2

開始ページ:

785

終了ページ:

790

出版情報:

Aederlmannsdorf, Switzwelns: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495849 [0878495843]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017895
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconduotors : ICDS
回次:	15th
会議開催地:	Budapest, Hungary
会議開催年:	1988.08.22-1988.08.26

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