Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon

Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon

著者名:

掲載資料名:

Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988

シリーズ名:

Materials science forum

シリーズ巻号:

38-41

発行年:

1989

巻:

Part1

開始ページ:

323

終了ページ:

328

出版情報:

Aederlmannsdorf, Switzwelns: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495849 [0878495843]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017895
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconduotors : ICDS
回次:	15th
会議開催地:	Budapest, Hungary
会議開催年:	1988.08.22-1988.08.26

類似資料:

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2 国際会議録 Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping Yamada-Kaneta,H., Kaneta,C., Ogawa,T. Trans Tech Publications	8 国際会議録 Low-Temperature Infrared Absorption Measurement for Oxygen Concentration and Precipitates in Heavily-Doped Silicon Wafers Koizuka, M., Inaba, M., Yamada-Kaneta, H. MRS - Materials Research Society
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